MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 Ω, which allows for easy integration into multi-chip modules (MCMs).

- Frequency: DC-26 GHz

- Flat Gain: 18 dB

- P1dB: 20 dBm

- OIP3: 34 dBm

- Bias: 7 V, 150 mA

- Package: Die



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