The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.
This series of devices meets RoHS requirements per EU Directive 2002/95/EC.
High power PIN diodes are designed as switching elements with frequencies through UHF band. Applications for these devices include antenna coupler, high power filter switches and Magnetic Resonance Imaging (MRI) switches. These devices are designed to withstand very large CW and pulse power environments where CW and peak RF voltages are in the kilovolt range and are offered in rugged low thermal impedance, stud and insulated stud packages.
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